Weak epitaxy growth of organic semiconductor thin films

被引:153
|
作者
Yang, Junliang [1 ]
Yan, Donghang [1 ]
机构
[1] Chinese Acad Sci, Changchun Inst Appl Chem, State Key Lab Polymer Phys & Chem, Grad Sch, Changchun 130022, Peoples R China
基金
中国国家自然科学基金;
关键词
P-SEXIPHENYL MONOLAYER; POTASSIUM HYDROGEN PHTHALATE; BENT-CORE COMPOUND; COPPER-PHTHALOCYANINE; PHASE-TRANSITIONS; TRANSISTORS; MOBILITY; DEVICES; TEMPERATURE; PERFORMANCE;
D O I
10.1039/b815723p
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films. WEG achieves the thin-film fabrication of disk-like organic semiconductor molecules with highly structural order, molecular level smoothness and large size domains on amorphous substrate. The organic field-effect transistor devices based on these thin films exhibit a high charge mobility that is comparable with their corresponding single-crystal devices. Moreover, it provides a way to produce organic superlattices.
引用
收藏
页码:2634 / 2645
页数:12
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