Heat propagation in H-bridge smart power chips under switching conditions

被引：6
|
作者：
Maj, B [1 ]
Augustin, A [1 ]
Kostka, A [1 ]
机构：
[1] Tech Univ Darmstadt, Solid State Elect Lab, D-64289 Darmstadt, Germany
来源：
MICROELECTRONICS JOURNAL | 2002年 / 33卷 / 09期
关键词：
DMOS-arrays; H-bridge; temperature distribution; eigenfunctions;
D O I：
10.1016/S0026-2692(02)00056-3
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A method for a time-dependent solution of the heat conduction equation for semiconductor power devices will be presented. The mathematical approach to the solution is taken with the help of the eigenfunctions and eigenvalues theory, a suitable approach for these types of problems. Examples for the application of this solution for smart power devices under switching conditions will be presented. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：727 / 731
页数：5
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