A novel metal-organic gel based electrolyte for efficient quasi-solid-state dye-sensitized solar cells

被引:39
|
作者
Fan, Jie [1 ]
Li, Lei [1 ]
Rao, Hua-Shang [1 ]
Yang, Qiu-Li [1 ]
Zhang, Jianyong [1 ]
Chen, Hong-Yan [1 ]
Chen, Liuping [1 ]
Kuang, Dai-Bin [1 ]
Su, Cheng-Yong [1 ]
机构
[1] Sun Yat Sen Univ, Lehn Inst Funct Mat, State Key Lab Optoelect Mat & Technol,Sch Chem &, MOE Key Lab Bioinorgan & Synthet Chem,KLGHEI Envi, Guangzhou 510275, Guangdong, Peoples R China
基金
中国国家自然科学基金;
关键词
EFFECTIVE CHARGE-TRANSPORT; RECOMBINATION; ORGANOGELATOR; PERFORMANCE; ADDITIVES;
D O I
10.1039/c4ta03120b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Metal-organic skeleton based gel electrolytes are prepared for the first time for high efficiency quasi-solid-state DSSCs. The gel electrolytes feature in their sponge-like porous matrix of a metal-organic gel (MOG) assembled by coordination of Al3+ and 1,3,5-benzenetricarboxylate (H3BTC), which can provide an excellent ability to accommodate electrolyte ingredients, thus largely preserving the properties of the liquid electrolyte. Meanwhile, the MOG electrolyte can well penetrate into the photoanode film to ensure a good interfacial contact. The effects of the concentration of active species in the MOG electrolyte on the photoelectrical performances are investigated. On increasing the concentration, J(sc) of gel-state cells improves gradually due to the enhanced I /I-3 redox couple content, while V-oc undergoes an increase first but decreases subsequently. The synergistic function of cations (such as Al3+, Li+, etc.) and tert-butylpyridine (TBP), which can induce a conductive band (CB) shift of the TiO2 photoanode and affect the electron recombination, may contribute to the variation of V-oc. By optimizing the composition of the gel electrolyte, a high conversion efficiency of over 8.60% can be obtained, which is a little lower than that of a liquid-state cell (9.13%). This research study will open up a new way to fabricate quasi-solid-state DSSCs with high efficiency.
引用
收藏
页码:15406 / 15413
页数:8
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