Thermoluminescence and thermal quenching measurements in SrS: Cu

In this paper we use a combination of thermoluminescence, thermal quenching, and spectroscopic techniques to investigate the interaction between Cui ion (in RF sputtered SrS:Cu) and trap states which become incorporated in the thin films during the growth process. UV excitation was used to excite the Cu for both time resolved and intensity dependent studies. The thermoluminescence, thermal quenching, and temperature-dependent fluorescence transient measurements were analyzed to obtain values for trap depths and frequency factors. (C) 1999 Elsevier Science B.V. All rights reserved.