Solution-processed, indacenodithiophene-based, small-molecule organic field-effect transistors and solar cells

被引：38
|
作者：
Liu, Deyu [1 ,2 ]
Xiao, Manjun [1 ,3 ]
Du, Zhengkun [1 ]
Yan, Yan [4 ]
Han, Liangliang [1 ]
Roy, V. A. L. [4 ]
Sun, Mingliang [2 ,4 ,5 ]
Zhu, Weiguo [3 ]
Lee, Chun Sing [4 ]
Yang, Renqiang [1 ]
机构：
[1] Chinese Acad Sci, Qingdao Inst Bioenergy & Bioproc Technol, CAS Key Lab Biobased Mat, Qingdao 266101, Peoples R China
[2] Ocean Univ China, Inst Mat Sci & Engn, Qingdao 266100, Peoples R China
[3] Xiangtan Univ, Minist Educ, Coll Chem, Key Lab Environm Friendly Chem & Applicat, Xiangtan 411105, Peoples R China
[4] City Univ Hong Kong, Ctr Super Diamond & Adv Films COSDAF, Hong Kong, Hong Kong, Peoples R China
[5] City Univ Hong Kong, Shenzhen Res Inst, Shenzhen 518057, Peoples R China
来源：
JOURNAL OF MATERIALS CHEMISTRY C | 2014年 / 2卷 / 36期
基金：
中国国家自然科学基金;
关键词：
OPEN-CIRCUIT VOLTAGE; HIGH-PERFORMANCE; CONJUGATED POLYMERS; PHOTOVOLTAIC CELLS; BENZODITHIOPHENE UNIT; BROAD ABSORPTION; BAND; HETEROJUNCTIONS; TECHNOLOGY; EFFICIENCY;
D O I：
10.1039/c4tc00721b
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Two indacenodithiophene-based molecules with different side chains, BTIDT-C6 and BTIDT-OC12, have been designed and synthesized for solution-processed, small-molecule organic solar cells (OSCs) donor materials. By optimizing the side chains, the hole mobility of the materials is modulated, which has been proven by the organic field-effect transistor (OFET) performances. Solar cells based on BTIDT-C6 show a power conversion efficiency (PCE) of 4.83%. To the best of our knowledge, this is the first report about indacenodithiophene-based, solution-processed, small-molecule OFETs, and it is also one of the highest PCE reports for the indacenodithiophene-based, solution-processed, small-molecule OSCs. This report makes indacenodithiophene-based small molecules the third type of high-efficiency (5% PCE), solution-processed, small-molecule OSCs donor materials, in addition to benzodithiophene (BDT) and dithienosilole (DTS).
引用
收藏
页码：7523 / 7530
页数：8
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