p-Channel Ge MOSFET by Selectively Heteroepitaxially Grown Ge on Si

被引：51

作者：

Yu, Hyun-Yong ^{[1
]}

Ishibashi, Masato ^{[2
]}

Park, Jin-Hong ^{[1
]}

Kobayashi, Masaharu ^{[1
]}

Saraswat, Krishna C. ^{[1
]}

机构：

[1] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2009年 / 30卷 / 06期

关键词：

Anneal; dislocation; germanium; heteroepitaxy; hydrogen; MOSFET; selective growth; HIGH-QUALITY GE; FABRICATION; PMOSFETS; MOBILITY;

D O I：

10.1109/LED.2009.2019847

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show similar to 80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

引用

页码：675 / 677

页数：3

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