Shot noise in ferromagnetic single-electron tunneling devices

被引：66
|
作者：
Bulka, BR
Martinek, J
Michalek, G
Barnas, J
机构：
[1] Polish Acad Sci, Inst Mol Phys, PL-60179 Poznan, Poland
[2] Adam Mickiewicz Univ, Dept Phys, PL-61614 Poznan, Poland
来源：
PHYSICAL REVIEW B | 1999年 / 60卷 / 17期
关键词：
D O I：
10.1103/PhysRevB.60.12246
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Frequency-dependent current noise in ferromagnetic double junctions with a Coulomb blockade is studied theoretically in the limit of sequential tunneling. Two different relaxation processes are found in the correlations between spin-polarized tunneling currents: low-frequency spin fluctuations and high-frequency charge fluctuations. Spin accumulation in strongly asymmetric junctions is shown to lend to a negative differential resistance. We also show that large spin noise activated in the range of negative differential resistance gives rise to a significant enhancement of the current noise. [S0163-1829(99)09841-0].
引用
收藏
页码：12246 / 12255
页数：10
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