Full chemical fabrication of SrBi2(Ta,Nb)2O9 ferroelectric thin film capacitors

被引：2
|
作者：
Yi, JH [1 ]
Thomas, P [1 ]
Manier, M [1 ]
Mercurio, JP [1 ]
机构：
[1] Univ Limoges, Fac Sci, Lab Mat Ceram & Traitements Surface, ESA 6015, F-87060 Limoges, France
来源：
INTEGRATED FERROELECTRICS | 1999年 / 23卷 / 1-4期
关键词：
sol-gel spin-coating; RuO2; SrBi2(Nb; Ta)(2)O-2; ferroelectrics; thin films;
D O I：
10.1080/10584589908210141
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SrBi2(Ta,Nb)(2)O-9 ferroelectric thin film capacitors with RuO2 electrodes were prepared for the first time by a full chemical route. Stable sols of SrBi2(Ta,Nb)(2)O-9 precursors were obtained from mixtures of niobium (tantalum) ethoxide, bismuth and strontium 2-ethylhexanoates, Ruthenium dioxide precursors was prepared by dissolving an aqueous solution of ruthenium nitrosylnitrate into 2-methoxyethanol. Capacitors were fabricated by sequential spin coating the precursors on silicon wafers according to the sequence Si/RuO2/SrBi2(Ta,Nb)(2)O-9/RuO2. Fully crystallized crack-free materials were obtained by annealing at 700 degrees C for 2 h. Hysteresis loops (3 - 10 V) are similar to those observed using platinum electrodes.
引用
收藏
页码：77 / 88
页数：12
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