Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

被引：28

作者：

Millithaler, J. -F. ^{[1
]}

Iniguez-de-la-Torre, I. ^{[1
]}

Iniguez-de-la-Torre, A. ^{[1
]}

Gonzalez, T. ^{[1
]}

Sangare, P. ^{[2
]}

Ducournau, G. ^{[2
]}

Gaquiere, C. ^{[2
]}

Mateos, J. ^{[1
]}

机构：

[1] Univ Salamanca, Dept Fis Aplicada, E-37008 Salamanca, Spain

[2] Univ Lille 1, CNRS, UMR 8520, IEMN, F-59652 Villeneuve Dascq, France

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 07期

关键词：

DIODES;

D O I：

10.1063/1.4866166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, recent advances in the design of GaN planar Gunn diodes with asymmetric shape, so called self-switching diodes, are presented. A particular geometry for the nanodiode is proposed, referred as V-shape, where the width of the channel is intentionally increased as approaching the anode. This design, which reduces the effect of the surface-charges at the anode side, is the most favourable one for the onset of Gunn oscillations, which emerge at lower current levels and with lower threshold voltages as compared to the standard square geometry, thus enhancing the power efficiency of the self-switching diode as sub-millimeter wave emitters. (C) 2014 AIP Publishing LLC.

引用

页数：4

共 40 条

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