Batch bulk-micromachined high-precision metal-on-insulator microspires and their application to scanning tunneling microscopy

被引:2
|
作者
Kobayashi, D
Mita, Y
Shibata, T
Bourouina, T
Fujita, H
机构
[1] Univ Tokyo, Sch Frontier Sci, Dept Frontier Informat, Kashiwa, Chiba 2778561, Japan
[2] Univ Tokyo, Sch Engn, Dept Elect Engn, Bunkyo Ku, Tokyo 1130032, Japan
[3] Ecole Super Ingenieurs Elect & Electrotech, F-93162 Noisy Le Grand, France
[4] Univ Tokyo, Inst Ind Sci, Ctr Int Res MicroMechatron, Meguro Ku, Tokyo 1538505, Japan
关键词
D O I
10.1088/0960-1317/14/9/013
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A batch fabrication technology of high-precision metal-on-insulator microspires has been developed. In the fabrication process, only a self-convergent bulk micromachining by hydrofluoric acid isotropic etching is employed to sharpen fused silica. In the isotropic wet-etch process, convex corners, once they appear on the etched spires, are kept even in over-etching. This convex-corner preservation effect allows us to define the nanometer-scale profiles at the apex of the spires with micrometer-scale mask patterns. By sputtering platinum on the fabricated silica spires, we have succeeded in building exceptionally tall (0.15 mm) and nanopointed (50 nm curvature radius) metal-on-insulator spires having our designed apex structure. Clear scanning tunneling microscopy (STM) images of highly oriented pyrolytic graphite surface have been obtained by applying the microspire to an STM probe, thus verifying their applicability to an STM tip.
引用
收藏
页码:S76 / S81
页数:6
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