Metal ions drift in ultra-low K dielectrics

被引：0
|
作者：
Ou, Y. [1 ]
Wang, P. -I. [1 ]
Lu, T. -M. [1 ]
机构：
[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA
来源：
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4 | 2008年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Metal ions embedded in dielectric films may play an important role in the reliability of advanced interconnect systems. In this talk, we will discuss the generation and drift of different metal ions such as Cu, Ta, and Ti into the dielectric materials from gate electrodes under an external electric field at elevated temperatures. Some strategies to eliminate the generation of metal ions will also be presented.
引用
收藏
页码：1312 / 1315
页数：4
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