The effect of the aminating temperature on the synthesis of gallium nitride nanowires doped with magnesium

被引：5

作者：

Huang, Yinglong ^{[1
]}

Xue, Chengshan ^{[1
]}

Zhuang, Huizhao ^{[1
]}

Sun, Haibo ^{[1
]}

Zhang, Dongdong ^{[1
]}

Wang, Ying ^{[1
]}

Wang, Zouping ^{[1
]}

Guo, Yongfu ^{[1
]}

机构：

[1] Shandong Normal Univ, Inst Semicond, Jinan 250014, Peoples R China

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2009年 / 45卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Nanostructures; Nanofabrications; Scanning and transmission electron microscopy; Optical properties; GAN NANOWIRES;

D O I：

10.1016/j.spmi.2008.12.029

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

GaN nanowires doped with Mg have been synthesized at different temperature through ammoniating the magnetron-sputtered Ga2O3/Au layered films deposited on Si substrates. X-ray diffraction (XRD), Scanning electron microscope (SEM), high-resolution TEM (HRTEM) equipped with an energy-dispersive X-ray (EDX) spectrometer and photoluminescence (PL) were used to analyze the structure, morphology, composition and optical properties of the as-synthesized sample. The results show that the ammoniating temperature has a great impact on the properties of GaN. The optimally ammoniating temperature of Ga2O3/Au layer is 900 degrees C for the growth of GaN nanowires(NWs). The band gap emission (358 nm) relative to that (370 nm) of undoped GaN NWs has an apparent blueshift, which can be ascribed to the doping of Mg. Finally, the growth mechanism is also briefly discussed. (C) 2009 Elsevier Ltd. All rights reserved.

引用

页码：514 / 519

页数：6

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