Microscopic structure of defects in microcrystalline silicon

被引：49
|
作者：
Kondo, M [1 ]
Yamasaki, S
Matsuda, A
机构：
[1] Thin Film Silicon Solar Cells Superlab, Electrotech Lab, Tsukuba, Ibaraki 305, Japan
[2] Natl Inst Adv & Interdisciplinary Res, Higashi, Iabaraki 305, Japan
来源：
JOURNAL OF NON-CRYSTALLINE SOLIDS | 2000年 / 266卷
关键词：
D O I：
10.1016/S0022-3093(99)00870-4
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Electron spin resonance (ESR) on paramagnetic defects in hydrogenated microcrystalline silicon (mu c-Si:H) has been studied to investigate its microscopic structure. From the anisotropy of preferentially oriented sample along (110) we suggest that the fine structure and its angular dependence arise from the grain boundary having (111) axial symmetry with g-tensors of g(perpendicular to) similar to 2.0022 and g(perpendicular to) similar to 2.0078 such as the Pb center. A simulation study indicates the presence of isotropic components arising from grain boundary defects on randomly oriented crystallites and dangling bonds in the amorphous structure. Thermal desorption of hydrogen from mu c-Si:H was correlated with the isochronal annealing of the ESR spectra. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：544 / 547
页数：4
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