Characterization of Cu2O Thin Film grown by Molecular Beam Epitaxy

被引：3

作者：

Oshima, Takumi ^{[1
]}

Nohara, Masaya ^{[1
]}

Hoshina, Takuya ^{[1
]}

Takeda, Hiroaki ^{[1
]}

Tsurumi, Takaaki ^{[1
]}

机构：

[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Meguro Ku, Tokyo 1528552, Japan

来源：

ELECTROCERAMICS IN JAPAN XVI | 2014年 / 582卷

关键词：

Cu2O; molecular beam epitaxy; epitaxial film; p-type semiconductor; SOLAR-CELLS; OXIDE; DEPOSITION;

D O I：

10.4028/www.scientific.net/KEM.582.157

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the growth of Cu2O thin films on glass and MgO(100) substrates by molecular beam epitaxy. Crystal orientation of Cu2O thin films on glass substrate were changed from (100) to (111) with increasing the deposition rate. The Cu2O thin films were epitaxially grown on MgO(100) substrate with an orientation relationship of Cu2O(110) parallel to MgO(100). The film quality and electrical properties of Cu2O thin films were changed with deposition rate. The slow deposition rate resulted in high conductivity and mobility, as well as good crystallinity and orientation.

引用

页码：157 / 160

页数：4

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