Subband-resonance oscillations in undoped GaAs/AlAs type-II superlattices under photoexcitation

被引：1
|
作者：
Mimura, H
Hosoda, M
Ohtani, N
Grahn, HT
Yokoo, K
机构：
[1] ATR, OPT & RADIO COMMUN RES LABS, KYOTO 61902, JAPAN
[2] ATR, ADAPT COMMUN RES LABS, KYOTO 61902, JAPAN
[3] TOKYO INST TECHNOL, RES CTR QUANTUM EFFECT ELECT, MEGURO KU, TOKYO 152, JAPAN
来源：
APPLIED SURFACE SCIENCE | 1997年 / 113卷
关键词：
self-oscillation; GaAs/AlAs; type-II; superlattice; electric-field domain;
D O I：
10.1016/S0169-4332(96)00875-6
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Subband-resonance oscillations have been observed in photoexcited, undoped type-II GaAs-AlAs superlattices. The frequency can be tuned over a wide range either by the applied voltage or the photoexcited carrier density. The oscillations can be explained by an oscillating space-charge which forms the domain boundary between two electric-field regions, which are attributed to negative differential velocity originating from X-related resonant tunneling.
引用
收藏
页码：85 / 89
页数：5
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