Physical failure analysis in semiconductor industry - challenges to microscopy

被引:0
|
作者
Zschech, E [1 ]
Langer, E
Meyer, AM
Engelmann, HJ
Stegmann, H
Geisler, H
Tracy, B
Schneider, G
机构
[1] AMD Saxony LLC & Co KG, Dresden, Germany
[2] AMD Inc, Sunnyvale, CA USA
[3] BESSY, Berlin, Germany
关键词
D O I
暂无
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
With the ongoing scaling-down of transistor features and interconnect dimensions and with the introduction of new processes and materials, physical failure analysis becomes more and more an essential task to exclude both yield-limiting process irregularities and reliability-related failures in the semiconductor industry. Advanced imaging tools and techniques are needed to ensure high manufacturing yield and product reliability. The application of scanning and transmission electron microscopy techniques, X-ray microscopy, as well as scanning probe microscopy for physical failure analysis is discussed.
引用
收藏
页码:487 / 495
页数:9
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