ToF-SIMS depth profiling of nanoparticles: Chemical structure of core-shell quantum dots

被引:12
|
作者
Gulin, Alexander [1 ,2 ]
Shakhov, Aleksander [1 ,2 ]
Vasin, Alexander [1 ,2 ]
Astafiev, Artyom [1 ,2 ]
Antonova, Olga [3 ]
Kochev, Sergei [3 ]
Kabachii, Yurii [3 ]
Golub, Alexandre [3 ]
Nadtochenko, Victor [1 ,2 ]
机构
[1] Russian Acad Sci, NN Semenov Inst Chem Phys, Kosygin St 4, Moscow 119991, Russia
[2] Lomonosov Moscow State Univ, Dept Chem, Leninskiye Gory 1-3, Moscow 119991, Russia
[3] Russian Acad Sci, AN Nesmeyanov Inst Organoelement Cpds, 28 Vavilov St, Moscow 119991, Russia
基金
俄罗斯科学基金会;
关键词
Secondary ion mass spectrometry; ToF-SIMS; Depth profiling; Semiconductor quantum dots; Core-shell nanoparticles; Quantum dots synthesis; ION MASS-SPECTROMETRY; TOPOGRAPHY;
D O I
10.1016/j.apsusc.2019.03.097
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Time-of-flight secondary ion mass spectrometry (ToF-SIMS) is a valuable tool for chemical imaging of surfaces and depth profiling. The main goal of the present work is to develop technique for chemical composition and structure characterization of core-shell quantum dots (QDs) by ToF-SIMS combined with sputter depth profiling. We report a method to acquire 6 nm CdSe/ZnS core-shell QDs depth profiles distinguishing core and shell layers. Obtained selenium and sulfur profiles correlate with core-shell structure characterized by transmission electron microscopy, X-ray diffraction and luminescence spectroscopy. Sample preparation for ToF-SIMS analysis involves accurate QDs deposition on thoroughly cleaned substrate surface, resulted in fairly flat topography and absence of significant aggregations verified by atomic force microscopy. We demonstrate capabilities of proposed technique for analysis of dopant atoms by establishing depth distribution of dopant atom inside Mn/ZnS/CdS quantum dots. Obtained results suggest that QDs do not melt under Cs+ or Bi3+ bombardment.
引用
收藏
页码:144 / 150
页数:7
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