A novel high-frequency high-voltage LDMOS transistor using an extended gate RESURF technology

被引：0
|
作者：
Vestling, L
Edholm, B
Olsson, J
Tiensuu, S
Soderbarg, A
机构：
来源：
ISPSD '97: 1997 IEEE INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS | 1997年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel high-voltage DMOS transistor with a low doped extended gate is presented. The device withstands 240 V in off-state and has a specific on-resistance of 24 m Ohm cm(2). The transconductance is 60 mS/mm at 3 V gate voltage. The sub-micron channel length gives small-signal high-frequency performance as f(T) = 2.8 GHz and f(max) = 5.8 GHz and the unilateral power gain at 900 MHz is over 15 dB. Dependence of breakdown voltage and on-resistance from gate doping level and polysilicon gate length are investigated with device simulations. It was found that the breakdown voltage is highly dependent on the gate doping level.
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页码：45 / 48
页数：4
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