First-principle calculations for mechanisms of semiconductor epitaxial growth

被引：4
|
作者：
Oshiyama, A [1 ]
机构：
[1] Univ Tsukuba, Inst Phys, Tsukuba, Ibaraki 3058571, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2002年 / 237卷
关键词：
adsorption; diffusion; growth models; molecular beam epitaxy; semiconducting silicon;
D O I：
10.1016/S0022-0248(01)01840-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
First-principle total-energy calculations performed for group-IV adatom diffusion on hydrogenated Si(1 0 0) surfaces are reviewed. Elementary atomic reactions during surface diffusion are identified. The morphology of epitaxially grown films is discussed based on quantum mechanical calculations. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1 / 7
页数：7
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