Preparation of Al2O3 film by sol-gel method on thermally evaporated Al film

被引：3
|
作者：
Yang, Pengfei [1 ]
Yao, Manwen [1 ]
Xiao, Ruihua [1 ]
Chen, Jianwen [1 ]
Yao, Xi [1 ]
机构：
[1] Tongji Univ, Funct Mat Res Lab, Shanghai 200092, Peoples R China
来源：
VACUUM | 2014年 / 107卷
基金：
美国国家科学基金会; 对外科技合作项目（国际科技项目）;
关键词：
Al2O3; film; Thermal evaporation; Hillock; J-E curve; ALUMINUM THIN-FILMS; HILLOCK FORMATION; EXPANSION; STRESS; STATE;
D O I：
10.1016/j.vacuum.2014.04.008
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Sol-gel spin-coated Al2O3 film was deposited on quartz glass substrate with thermally evaporated Al film. Optical micrographs show that the Al film break forming perforated pinholes after the Al2O3 film was thermally processed. Pinholes on the film can be reduced by inserting a metal transition layer between the quartz glass substrate and the Al film but cannot be avoided after thermal process. Doping of scandium in evaporation aluminum cannot perfectly prevent the Al films from breaking and perforation. The breaking and perforation during the fabrication of the Al2O3 film can be dramatically reduced by heating the quartz glass substrate at 320 degrees C during thermal evaporation. The J-E curves show that the bottom Al electrode greatly affected the dielectric breakdown electric field. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：112 / 115
页数：4
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