Phase changeable silver selenide thin films fabricated by pulse electrodeposition

被引:16
|
作者
An, Boo Hyun [1 ]
Ji, Hye Min [1 ]
Wu, Jun-Hua [2 ]
Cho, Moon Kyu [3 ]
Yang, Ki-Yeon [1 ]
Lee, Heon [1 ]
Kim, Young Keun [1 ]
机构
[1] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea
[2] Korea Univ, Res Inst Engn & Technol, Seoul 136713, South Korea
[3] Korea Univ, Program Micronano Syst, Seoul 136713, South Korea
关键词
Silver selenide; Electrodeposition; Phase changeable memory; TRANSPORT-PROPERTIES; AG2SE; CHALCOGENIDES; DEPENDENCE; TRANSITION; NANOWIRES; STORAGE; MEMORY;
D O I
10.1016/j.cap.2008.12.017
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have used a simple and direct method to successfully prepare Ag2Se thin films by pulse electrodeposition from a single aqueous solution of Ag and Se ions. The composition analysis confirms the stoichiometry and the morphological characterization shows that the thin films are dense and smooth. The films have the orthorhombic structure of regular Ag2Se materials at room temperature, while the electrical measurements reveal an interesting electrical behavior, similar to that of the Ag2Se nanowire arrays. The Ag2Se thin films were successfully deposited into polymer templates to form well-defined Ag2Se nanostructure, which provides a possibility to apply the method to high density, non-volatile memories based on phase change materials. (c) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:1338 / 1340
页数:3
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