Design, growth, and characterization of GaAs/AlAs type-II superlattices

被引：0
|
作者：
Mu, XD [1 ]
Ding, YJ [1 ]
Khurgin, JB [1 ]
Wang, XJ [1 ]
Zhang, JP [1 ]
Choa, FS [1 ]
机构：
[1] Lehigh Univ, Dept Elect & Comp Engn, Bethlehem, PA 18015 USA
来源：
QUANTUM DOT DEVICES AND COMPUTING | 2002年 / 4656卷
关键词：
type-II superlattices; quasi-indirect transition;
D O I：
10.1117/12.460806
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report our recent results on characterization of GaAs/AlAs superlattices exhibiting evidence of a quasi-indirect transition between minibands. These structures have potential applications in semiconductor optical amplifiers with greatly-reduced cross-talk at high bit rates and Q-switched lasers.
引用
收藏
页码：95 / 99
页数：5
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