Multiscale modeling of polycrystalline silicon

被引：11
|
作者：
Chen, YP [1 ]
Lee, JD [1 ]
机构：
[1] George Washington Univ, Sch Engn & Appl Sci, Dept Mech & Aerosp Engn, Washington, DC 20052 USA
来源：
INTERNATIONAL JOURNAL OF ENGINEERING SCIENCE | 2004年 / 42卷 / 10期
基金：
美国国家科学基金会;
关键词：
polycrystalline; silicon; multiscale modeling; micromorphic theory;
D O I：
10.1016/j.ijengsci.2003.11.004
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Polycrystalline solid is composed of randomly distributed grains and grain boundaries. The size of grains is usually in the nano/micro-scale. In this paper, the general micromorphic theory, as well as a specialized micromorphic theory for covalent and ionic crystals, is introduced. A statistical model for polycrystalline material is adopted. Each grain is modeled as crystallized solid by micromorphic theory, while the grain boundaries are modeled as in its amorphous phase by classical continuum theory. Size-dependent material properties of silicon are investigated. Finite element analysis of thermomechanical coupling phenomenon in polycrystalline silicon is performed and numerical results are presented and discussed. (C) 2004 Elsevier Ltd. All rights reserved.
引用
收藏
页码：987 / 1000
页数：14
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