Nano-structure analysis of polycrystallization in amorphous silicon on Si(100)

被引：0
|
作者：
Fukaya, T [1 ]
Kimura, K [1 ]
Takahashi, K [1 ]
Shibayama, T [1 ]
Takahashi, H [1 ]
机构：
[1] Hokkaido Univ, Grad Sch Engn, Sapporo, Hokkaido 0608628, Japan
来源：
PRICM 4: FORTH PACIFIC RIM INTERNATIONAL CONFERENCE ON ADVANCED MATERIALS AND PROCESSING, VOLS I AND II | 2001年
关键词：
polysilicon; ATEM; annealing; nano-structure;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In order to improve the performance of high-speed, ultra-large-scale integrated (ULSI) devices, control of the grain size of polysilicon is needed. Polycrystallization of amorphous silicon has been studied by using thermal annealing following low-pressure chemical vapor deposition (LPCVD) deposited on Si(100) substrate. The polycrystallization process in amorphous silicon strongly depends on annealing temperature and time. In this study, cross-sectional and plane-view observations were carried out using analytical transmission electron microscope (ATEM). Cross-sectional TEM specimens were prepared by the conventional ion milling method and plane-view TEM specimens were prepared by the focused ion beam (FIB) micro-sampling technique. The effects of annealing temperature and time on polycrystallization in amorphous silicon deposited on Si(100) were investigated.
引用
收藏
页码：171 / 174
页数：4
相关论文
共 50 条
  • [1] Nano-structure formed by nanosecond laser annealing on amorphous Si surface
    Klinger, D.
    Lusakowska, E.
    Zymierska, D.
    [J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 323 - 326
  • [2] Nano-structure observed in highly doped silicon crystalline
    Lu, Zhiheng
    Wang, Dachan
    Luo, Yan
    [J]. Journal of Materials Science and Technology, 1993, 9 (03): : 232 - 234
  • [3] A nano-structure memory with silicon on insulator edge channel and a nano dot
    Park, G
    Han, S
    Hwang, T
    Shin, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B): : 7190 - 7192
  • [4] Nano-Structure Observed in Highly Doped Silicon Crystalline
    Zhiheng LU Department of Physics
    [J]. Journal of Materials Science & Technology, 1993, (03) : 232 - 234
  • [5] Low temperature process for nano-structure formation with Si films
    Nam, HG
    Koo, KH
    [J]. THIN SOLID FILMS, 2000, 379 (1-2) : 101 - 106
  • [6] Photoluminescence and structure investigations of Si nano-crystals in amorphous silicon matrix
    Torchynska, T. V.
    Hernandez, A. Vivas
    Matsumoto, Yasuhiro
    Khomenkova, L.
    Shcherbina, L.
    [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 2006, 352 (9-20) : 1188 - 1191
  • [7] Emission and structure investigations of Si nano-crystals embedded in amorphous silicon
    Vivas Hernandez, A.
    Torchynska, T. V.
    Quintos Vazquez, A. L.
    Matsumoto, Yasuhiro
    Khomenkova, L.
    Shcherbina, L.
    [J]. PROCEEDINGS OF THE INTERNATIONAL CONFERENCE ON NANOSCIENCE AND TECHNOLOGY, 2007, 61 : 1231 - 1235
  • [8] Fabrication of self-supported Si nano-structure with STM
    Hamanaka, H
    Ono, T
    Esashi, M
    [J]. MEMS 97, PROCEEDINGS - IEEE THE TENTH ANNUAL INTERNATIONAL WORKSHOP ON MICRO ELECTRO MECHANICAL SYSTEMS: AN INVESTIGATION OF MICRO STRUCTURES, SENSORS, ACTUATORS, MACHINES AND ROBOTS, 1997, : 153 - 158
  • [9] Physical properties of spinel nano-structure epitaxially grown on MgO(100)
    Kubo, T
    Nozoye, H
    [J]. APPLIED SURFACE SCIENCE, 2002, 188 (3-4) : 545 - 549
  • [10] Synthesis Gallium Nitride on Porous Silicon Nano-Structure for Optoelectronics Devices
    Jabbar, Haneen D.
    Fakhri, Makram A.
    AbdulRazzaq, Mohammed Jalal
    [J]. SILICON, 2022, 14 (18) : 12837 - 12853
12345