Thermoelectric properties of quantum dot chains

被引:13
|
作者
Yadav, A. [1 ]
Pipe, K. P. [1 ]
Ye, W. [2 ]
Goldman, R. S. [2 ]
机构
[1] Univ Michigan, Dept Mech Engn, Ann Arbor, MI 48109 USA
[2] Univ Michigan, Dept Mat Sci & Engn, Ann Arbor, MI 48109 USA
关键词
SEMICONDUCTOR NANOWIRES; THERMAL-CONDUCTIVITY; ELECTRONIC-STRUCTURE; SUPERLATTICES; FIGURE; MERIT; FABRICATION; COMPOSITE; TRANSPORT; DEVICE;
D O I
10.1063/1.3094029
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the thermoelectric properties of quantum dot (QD) chain nanocomposites in which the QDs are aligned to form chains. In both the InAs/GaAs and Ge/Si systems, we use a constant relaxation time approximation to calculate and compare the electrical conductivity, Seebeck coefficient, and thermoelectric power factor for QD chains, three-dimensional ordered QD arrays, random QD arrays, and bulk GaAs or Si. Our calculations suggest that the incorporation of QD chains into a matrix increases its thermoelectric power factor by a factor of 3 (1.5) for the InAs/GaAs (Ge/Si) system. (C) 2009 American Institute of Physics. [DOI: 10.1063/1.3094029]
引用
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页数:7
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