Large-area far ultraviolet-C;
Aluminum gallium nitride layer;
Carbon nanotube based cold cathod electron-beam;
High-temperature metal-organic chemical vapor deposition;
ALGAN;
INJECTION;
D O I:
10.1016/j.tsf.2020.138292
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
In this study, we demonstrated a far ultraviolet-C (far-UVC) emitter using Al0.73Ga0.27N/AlN multiple quantum wells (MQWs) by carbon nanotube based cold cathode electron-beam (C-beam) excitation. The Al0.73Ga0.27N/AlN MQW structure was grown on AlN/sapphire by high-temperature metal-organic chemical vapor deposition. The large-area far-UVC emission (276 mm(2)) was investigated using C-beam, as a function of anode voltage (VA) and anode current (IA), and the near-band-edge emission of Al0.73Ga0.27N/AlN MQWs was observed at a peak wavelength of 233 nm, with a VA of 4 kV, an IA of 0.5 mA. The results suggest that the large-area C-beam pumped far-UVC emitter could be a promising sterilization light source.
机构:
Kyung Hee Univ, Dept Informat Display, Seoul 02447, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
Yoo, Sung Tae
So, Byeongchan
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机构:
Korea Polytech Univ, Convergence Ctr Adv Nano Semicond CANS, Dept Nanoopt Engn, Siheung Si 15073, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
So, Byeongchan
Lee, Hye In
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机构:
Kyung Hee Univ, Dept Informat Display, Seoul 02447, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
Lee, Hye In
Nam, Okhyun
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机构:
Korea Polytech Univ, Convergence Ctr Adv Nano Semicond CANS, Dept Nanoopt Engn, Siheung Si 15073, Gyeonggi Do, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
Nam, Okhyun
Park, Kyu Chang
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机构:
Kyung Hee Univ, Dept Informat Display, Seoul 02447, South KoreaKyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea