Large-area far ultraviolet-C emission of Al0.73Ga0.27N/AlN multiple quantum wells using carbon nanotube based cold cathode electron-beam pumping

被引:6
|
作者
Lee, Joohyoung [1 ]
Yoo, Sung Tae [2 ]
So, Byeongchan [1 ]
Park, Kyu Chang [2 ]
Nam, Okhyun [1 ]
机构
[1] Korea Polytech Univ, Convergence Ctr Adv Nano Semicond CANS, Dept Nano & Semicond Engn, Siheung Si 15073, Gyeonggi Do, South Korea
[2] Kyung Hee Univ, Dept Informat Display, Seoul 02447, South Korea
关键词
Large-area far ultraviolet-C; Aluminum gallium nitride layer; Carbon nanotube based cold cathod electron-beam; High-temperature metal-organic chemical vapor deposition; ALGAN; INJECTION;
D O I
10.1016/j.tsf.2020.138292
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this study, we demonstrated a far ultraviolet-C (far-UVC) emitter using Al0.73Ga0.27N/AlN multiple quantum wells (MQWs) by carbon nanotube based cold cathode electron-beam (C-beam) excitation. The Al0.73Ga0.27N/AlN MQW structure was grown on AlN/sapphire by high-temperature metal-organic chemical vapor deposition. The large-area far-UVC emission (276 mm(2)) was investigated using C-beam, as a function of anode voltage (VA) and anode current (IA), and the near-band-edge emission of Al0.73Ga0.27N/AlN MQWs was observed at a peak wavelength of 233 nm, with a VA of 4 kV, an IA of 0.5 mA. The results suggest that the large-area C-beam pumped far-UVC emitter could be a promising sterilization light source.
引用
收藏
页数:6
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