Comprehensive Study of N-Channel and P-Channel Twin Poly-Si FinFET Nonvolatile Memory

被引：6

作者：

Yeh, Mu-Shih ^{[1
]}

Wu, Yung-Chun ^{[1
]}

Liu, Kuan-Cheng ^{[1
]}

Hung, Min-Feng ^{[1
]}

Jhan, Yi-Ruei ^{[1
]}

Lu, Nan-Heng ^{[1
]}

Chung, Ming-Hsien ^{[1
]}

Wu, Min-Hsin ^{[1
]}

机构：

[1] Natl Tsing Hua Univ, Dept Engn & Syst Sci, Hsinchu 30013, Taiwan

来源：

IEEE TRANSACTIONS ON NANOTECHNOLOGY | 2014年 / 13卷 / 04期

关键词：

Fin field-effect transistor (FinFET); flash memory; nanowires (NWs); nonvolatile memory (NVM); Omega-gate; 3-D; twin poly-Si; THIN-FILM TRANSISTORS; FLOATING-GATE MEMORY; FLASH MEMORY; PERFORMANCE;

D O I：

10.1109/TNANO.2014.2323983

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper develops the n-channel and p-channel twin poly-Si fin field-effect transistor nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results demonstrate that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.6 V after 10(4) program and erase cycles, and after 10 years, the charge is 53.4% of its initial value. In the future, it can be applied in multilayer Si ICs in fully functional system-on-panel, active-matrix liquid-crystal display and 3-D stacked flash memory.

引用

页码：814 / 819

页数：6

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