Self-organization in SOIFET

被引:1
|
作者
Dobrovolsky, VN [1 ]
Ishchuk, LV [1 ]
Ninidze, GK [1 ]
Pavljuk, SP [1 ]
Plichko, YO [1 ]
机构
[1] Natl Taras Shevchenko Univ Kyiv, Dept Radiophys, UA-01033 Kiev, Ukraine
关键词
SOI; electron-hole plasma; autosoliton;
D O I
10.1016/j.mee.2004.01.019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Silicon-on-Insulator Field-Effect Transistors were investigated at extremely high drain currents. These currents heat the silicon film of transistor and cause the generation of thermal electron-hole plasma there. We discovered the red light emission from such plasma. It appears after the extinction of known yellowish-white emission and is of thermal nature. The emitting sections of the film are in the shape of spots. They are regularly arranged in the transistor drain area. The number of spots increases with the current growth. S-shape sections on both the current-voltage and luminous-current characteristics correspond to the appearance of each new spot. Plasma stratification and formation of luminous spots are explained by the occurrence of thermodiffusion autosolitons in the plasma. (C) 2004 Elsevier B.V. All rights reserved.
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页码:383 / 387
页数:5
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