On origin of surface resistance degradation of YBa2Cu3O7-δ films in millimeter waveband

Measuring data of the surface resistance R-S(T) temperature dependence of YBa2Cu3O7-delta epitaxial films on sapphire substrates are reported, The films were prepared by impulse laser ablation technique. Surface impedance measuring was made in 65 GHz frequency range. We shown that R-S(T) are in accordance with epitaxial film considering the existence of spatial inhomogeneities as normal spherical domains. The analysis of YBa2Cu3O7-delta film contamination was made by a laser mass-spectrometry technique. It was shown that normal spherical domains of YBa2Cu3O7-delta films include oxidizer cooper compounds filling cluster voids and film edges. The measuring was made for a set of samples, which have a different history (technology regimes, critical parameters and geometry).