EFTEM study of plasma etched low-k Si-O-C dielectrics

被引：0
|
作者：
Hens, S
Bender, H
Donaton, RA
Maex, K
Vanhaelemeersch, S
Van Landuyt, J
机构：
[1] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium
[2] IMEC, B-3001 Louvain, Belgium
来源：
MICROSCOPY OF SEMICONDUCTING MATERIALS 2001 | 2001年 / 169期
关键词：
D O I：
暂无
中图分类号：
TH742 [显微镜];
学科分类号：
摘要：
Materials with low dielectric constant ("low-k'') in combination with Cu metallization are replacing the oxide based dielectrics with Al metallization in future generations of micro-electronic devices. In this work, a carbon doped oxide low-k dielectric material is studied after different kinds of etch/strip steps in single damascene Cu. filled line structures. Interline capacitance measurements indicate a dependence of the dielectric constant on the strip conditions. EFTEM is used to study the composition of the dielectric material and the modification of the low-k material at the sidewall of the etched structures for the various treatment conditions.
引用
收藏
页码：415 / 418
页数：4
相关论文
共 50 条
  • [1] Effect of UV illumination on deposition of low-k Si-O-C(-H) films by PECVD
    Lee, HJ
    Yang, CS
    Chi, CK
    [J]. DESIGNING, PROCESSING AND PROPERTIES OF ADVANCED ENGINEERING MATERIALS, PTS 1 AND 2, 2004, 449-4 : 473 - 476
  • [2] Plasma etching of low-k dielectrics
    Thomas, Dave
    Powell, Kevin
    Song, Yiping
    Tossell, David
    [J]. European Semiconductor, 2000, 22 (05): : 30 - 31
  • [3] Plasma processing of low-k dielectrics
    Baklanov, Mikhail R.
    de Marneffe, Jean-Francois
    Shamiryan, Denis
    Urbanowicz, Adam M.
    Shi, Hualiang
    Rakhimova, Tatyana V.
    Huang, Huai
    Ho, Paul S.
    [J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (04)
  • [4] Plasma etching of low-k dielectrics
    Thomas, Dave
    Powell, Kevin
    Song, Yiping
    Tossell, David
    [J]. European Semiconductor Design Production Assembly, 2000, 22 (05): : 30 - 31
  • [5] Supercritical silylation of ashed Si-O-C LOW-K films to limit changes in critical dimensions
    Reidy, RF
    Orozco-'I'eran, RA
    Zhang, ZP
    Nerusu, PK
    Matz, PD
    Mueller, DW
    [J]. ADVANCED METALLIZATION CONFERENCE 2003 (AMC 2003), 2004, : 513 - 517
  • [6] Corrosion of Si-O based porous low-k dielectrics
    Hall, A. B.
    Irvine, G. J.
    Gates, S. M.
    Lane, M. W.
    [J]. APPLIED PHYSICS LETTERS, 2012, 101 (20)
  • [7] Mechanical Properties of Si-C-O-H Low-k Dielectrics Prepared by Plasma Enhanced Chemical Vapor Deposition
    Woytowitz, Peter
    Roham, Sassan
    Niu, Dong
    Fu, Haiying
    [J]. 2011 22ND ANNUAL IEEE/SEMI ADVANCED SEMICONDUCTOR MANUFACTURING CONFERENCE (ASMC), 2011,
  • [8] Plasma modification of porous low-k dielectrics
    Le, QT
    Whelan, CM
    Struyf, H
    Bender, H
    Conard, T
    Brongersma, SH
    Boullart, W
    Vanhaelemeersch, S
    Maex, K
    [J]. ELECTROCHEMICAL AND SOLID STATE LETTERS, 2004, 7 (09) : F49 - F53
  • [9] Plasma etching for the application to low-k dielectrics devices
    Lee, J. W.
    Kim, H. W.
    Han, J. W.
    Kim, M. -S.
    Yoo, B. -D.
    Kim, M. -H.
    Lee, C. -H.
    Lee, C. H.
    Lim, C. H.
    Hwang, S. -K.
    Lee, C.
    Chung, D. J.
    Park, S. -G.
    Lee, S. G.
    O, B. H.
    Kim, J.
    Chang, S. P.
    Lee, S. H.
    Chai, S. -Y.
    Lee, W. I.
    Park, S. -E.
    Kim, K.
    Choi, D. -K.
    Chung, C. -W.
    [J]. RESEARCH TRENDS IN CONTEMPORARY MATERIALS SCIENCE, 2007, 555 : 113 - +
  • [10] Expanding thermal plasma for low-k dielectrics deposition
    Creatore, M
    Barrell, Y
    Kessels, WMM
    van de Sanden, MCM
    [J]. MATERIALS, TECHNOLOGY AND RELIABILITY FOR ADVANCED INTERCONNECTS AND LOW-K DIELECTRICS-2003, 2003, 766 : 339 - 344
12345