Fabrication of AlInGaN-based blue-violet laser diode with low input power

Recent progress on the fabrication processes of blue-violet laser diodes (BV-LDs) which reduced input power and enhanced heat dissipation has been discussed. In order to reduce operating current of the BV-LDs, a novel ridge waveguide structure with two different side angles was developed, and ridge width and thickness between active layer and etched surface wais optimized, as well. For lowering of operating voltage, we optimized the thickness of the highly Mg doped p-GaN contact layer, where the ohmic metals were contacted, as well as pre-treatment process before deposition of p-electrode. Improving the fabrication processes for high power AlInGaN-based BV-LDs as well as optimizing design and growth conditions for BV-LD structures resulted in a threshold current density and a threshold voltage of 3.3 kA/cm(2) and 4.4 V, respectively. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.