Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

被引：56
|
作者：
Jin, N [1 ]
Chung, SY
Heyns, RM
Berger, PR
Yu, RH
Thompson, PE
Rommel, SL
机构：
[1] Ohio State Univ, Dept Elect & Comp Engn, Columbus, OH 43210 USA
[2] Ohio State Univ, Herchel Smith Lab Med Chem, Dept Phys, Columbus, OH 43210 USA
[3] USN, Res Lab, Washington, DC 20375 USA
[4] Rochester Inst Technol, Rochester, NY 14623 USA
来源：
IEEE ELECTRON DEVICE LETTERS | 2004年 / 25卷 / 09期
基金：
美国国家科学基金会;
关键词：
molecular beam epitaxy (MBE); multivalued logic; negative differential resistance (NDR); resonant interband tunneling diodes (RITD); silicon; silicon germanium;
D O I：
10.1109/LED.2004.833845
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.
引用
收藏
页码：646 / 648
页数：3
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