Present Status, Knowledge and Issues of Oxide Semiconductor Technology

被引：0

作者：

Kamiya, Toshio ^{[1
]}

Nomura, Kenji ^{[1
]}

Hosono, Hideo ^{[1
]}

机构：

[1] Tokyo Inst Technol, Midori Ku, 4259 Nagatsuta, Yokohama, Kanagawa 2268503, Japan

来源：

IDW/AD '12: PROCEEDINGS OF THE INTERNATIONAL DISPLAY WORKSHOPS, PT 1 | 2012年 / 19卷

关键词：

Oxide semiconductor; thin-film transistor; impurity; defect; stability; GA-ZN-O; ELECTRONIC-STRUCTURE; TRANSISTORS; DEFECTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oxide semiconductors have been studied very intensively from late '90, and the first commercial product of oxide TFT appeared in this March. This paper reviews the present status and new applications of oxide semiconductors with main focus on amorphous oxide semiconductor. Then, we will discuss clarified knowldges and remaining issues.

引用

页码：405 / 408

页数：4

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