GaN Power Devices: Challenges for Improved Stability and Reliability

被引:0
|
作者
Meneghini, Matteo [1 ]
机构
[1] Univ Padua, Dipartimento Ingn Informaz, Via Gradenigo 6-A, I-35131 Padua, Italy
关键词
D O I
暂无
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
TuT8
引用
收藏
页数:1
相关论文
共 50 条
  • [1] Stability, Reliability, and Robustness of GaN Power Devices: A Review
    Kozak, Joseph Peter
    Zhang, Ruizhe
    Porter, Matthew
    Song, Qihao
    Liu, Jingcun
    Wang, Bixuan
    Wang, Rudy
    Saito, Wataru
    Zhang, Yuhao
    [J]. IEEE TRANSACTIONS ON POWER ELECTRONICS, 2023, 38 (07) : 8442 - 8471
  • [2] Reliability, Applications and Challenges of GaN HEMT Technology for Modern Power Devices: A Review
    Islam, Naeemul
    Mohamed, Mohamed Fauzi Packeer
    Khan, Muhammad Firdaus Akbar Jalaludin
    Falina, Shaili
    Kawarada, Hiroshi
    Syamsul, Mohd
    [J]. CRYSTALS, 2022, 12 (11)
  • [3] Reliability issues in GaN and SiC power devices
    Ueda, Tetsuzo
    [J]. 2014 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM, 2014,
  • [4] Establishing the reliability lifecycle of GaN power devices
    [J]. 2017, Hearst Business Communications (59):
  • [5] Application reliability validation of GaN power devices
    Bahl, Sandeep R.
    Joh, Jungwoo
    Fu, Lixing
    Sasikumar, Anup
    Chatterjee, Tathagata
    Pendharkar, Sameer
    [J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
  • [6] From Planar to Vertical GaN-on-Si Power Devices: Reliability Challenges to Efficient Power Conversion (Invited)
    Zagni, Nicolo
    [J]. 8TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE, EDTM 2024, 2024, : 256 - 258
  • [7] Power cycling reliability results of GaN HEMT devices
    Franke, Joerg
    Zeng, Guang
    Winkler, Tom
    Lutz, Josef
    [J]. PRODCEEDINGS OF THE 2018 IEEE 30TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2018, : 467 - 470
  • [8] GaN power devices: current status and future challenges
    Ueda, Tetsuzo
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58
  • [9] An improved reliability model for Si and GaN power FET
    Golan, Gady
    Azoulay, Moshe
    Avraham, Tsuriel
    Kremenetsky, Ilan
    Bernstein, Joseph B.
    [J]. MICROELECTRONICS RELIABILITY, 2018, 81 : 77 - 89
  • [10] Reliability issues of GaN based high voltage power devices
    Wuerfl, J.
    Bahat-Treidel, E.
    Brunner, F.
    Cho, E.
    Hilt, O.
    Ivo, P.
    Knauer, A.
    Kurpas, P.
    Lossy, R.
    Schulz, M.
    Singwald, S.
    Weyers, M.
    Zhytnytska, R.
    [J]. MICROELECTRONICS RELIABILITY, 2011, 51 (9-11) : 1710 - 1716