Composition modulation by twinning in InAsSb nanowires

被引：4

作者：

Schnedler, M. ^{[1
]}

Xu, T. ^{[2
,3
]}

Portz, V ^{[1
]}

Nys, J-P ^{[2
]}

Plissard, S. R. ^{[2
,4
]}

Berthe, M. ^{[2
]}

Eisele, H. ^{[5
]}

Dunin-Borkowski, R. E. ^{[1
]}

Ebert, P. ^{[1
]}

Grandidier, B. ^{[2
]}

机构：

[1] Forschungszentrum Julich, Peter Grunberg Inst, D-52425 Julich, Germany

[2] Univ Lille, Univ Valenciennes, CNRS, ISEN,Cent Lille,UMR 8520,IEMN, F-59000 Lille, France

[3] Shanghai Univ, Key Lab Adv Display & Syst Applicat, 149 Yanchang Rd, Shanghai 200072, Peoples R China

[4] Univ Toulouse, LAAS, CNRS, 7 Ave Colonel Roche, F-31400 Toulouse, France

[5] Tech Univ Berlin, Inst Festkorperphys, Hardenbergstr 36, D-10623 Berlin, Germany

来源：

NANOTECHNOLOGY | 2019年 / 30卷 / 32期

基金：

欧盟地平线“2020”;

关键词：

semiconductor nanowires; composition modulation; twin boundaries; scanning tunneling microscopy; ternary III-V compounds; SCANNING-TUNNELING-MICROSCOPY; WURTZITE; GROWTH; GAAS; ZINCBLENDE; SURFACE;

D O I：

10.1088/1361-6528/aaf9ce

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We observe a composition modulated axial heterostructure in zincblende (ZB) InAs0.90Sb0.10 nanowires initiated by pseudo-periodic twin boundaries using scanning tunneling microscopy. The twin boundaries exhibit four planes with reduced Sb concentration due to a lower Sb incorporation during lateral overgrowth of a 4H wurtzite as compared to a ZB stacking sequence. We anticipate that this leads to compositional band offsets in addition to known structural band offsets present between 4H and ZB polytypes, changing the band alignment from type II to type I.

引用

页数：5

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