Space-charge and injection limited current in organic diodes: A unified model

被引:19
|
作者
Lopez Varo, P. [1 ]
Jimenez Tejada, J. A. [1 ]
Lopez Villanueva, J. A. [1 ]
Deen, M. J. [2 ]
机构
[1] Univ Granada, Dept Elect & Tecnol Comp, CITIC UGR, E-18071 Granada, Spain
[2] McMaster Univ, Dept Elect & Comp Engn, Hamilton, ON L8S 4K1, Canada
关键词
Organic diodes; Modeling; Injection and transport of charge; SCLC; ILC and Ohmic regimes; LIGHT-EMITTING-DIODES; THIN-FILM TRANSISTORS; TRANSPORT; DEVICES; SEMICONDUCTORS; INTERFACES; CONDUCTION; MOBILITY; TRAPS; METAL;
D O I
10.1016/j.orgel.2014.05.039
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Space-charge and injection limited currents in organic diodes have been analyzed using a unified model. Both currents have been modeled using the transport equations combined with a proper value of the free charge density at the metal-organic interface. The method has been applied to diodes with different organic materials, metal contacts and lengths of the organic materials. This unified model accurately reproduces published current-voltage curves for a variety of diode structures operating at different temperatures and voltages. The results of the method, in the injection regime, have been compared with the results of pure injection models developed by other authors. The reduction of the computational time and the number of parameters in our model are important advantages of our procedure. Moreover, it is an alternative where the injection models start to fail: at low applied voltages, close to the Ohmic regime, and for low heights of the energy barrier at the interface. The treatment is complemented with a compact model that relates the current density j with the free charge-carrier density at the interface p(f)(0): p(f)(0) = K(1)j(m) + K-2, where the parameter K-1 depends on the barrier height at the interface, m depends on the organic material and K-2 controls the flat zone at low currents to include the dependence with thermal carriers and impurities. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:2526 / 2535
页数:10
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