FinFET and MOSFET preliminary comparison of gate oxide reliability

被引：11
|
作者：
Fernandez, R. [1 ]
Rodriguez, R.
Nafria, M.
Aymerich, X.
Kaczer, B.
Groeseneken, G.
机构：
[1] Univ Autonoma Barcelona, Dept Elect Engn, Bellaterra, Spain
[2] IES Castellarnau, Dept Educ Generalitat Catalunya, Sabadell 08206, Spain
[3] IMEC, B-3001 Louvain, Belgium
来源：
MICROELECTRONICS RELIABILITY | 2006年 / 46卷 / 9-11期
关键词：
D O I：
10.1016/j.microrel.2006.07.043
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.
引用
收藏
页码：1608 / 1611
页数：4
相关论文
共 50 条
  • [1] Active Channel Impact on SiC MOSFET Gate Oxide Reliability
    Pu, Shi
    Akin, Bilal
    Yang, Fei
    2021 THIRTY-SIXTH ANNUAL IEEE APPLIED POWER ELECTRONICS CONFERENCE AND EXPOSITION (APEC 2021), 2021, : 1250 - 1255
  • [2] SIMULATION AND COMPARISON OF VOLTAGE AND CURRENT CHARACTERISTICS OF FINFET BY VARYING ITS OXIDE THICKNESS WITH DUAL GATE MOSFET FOR IMPROVED CONDUCTIVITY.
    Reddya, T. Kiran Kumar
    Deepak, A.
    2022 14TH INTERNATIONAL CONFERENCE ON MATHEMATICS, ACTUARIAL SCIENCE, COMPUTER SCIENCE AND STATISTICS (MACS), 2022,
  • [3] SiC Power MOSFET Gate Oxide Breakdown Reliability - Current Status
    Cheung, Kin P.
    2018 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS), 2018,
  • [4] Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability
    Kaczer, B
    Degraeve, R
    Rasras, M
    Van de Mieroop, K
    Roussel, PJ
    Groeseneken, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2002, 49 (03) : 500 - 506
  • [5] Review on Methods for Trench MOSFET Gate Oxide Reliability and Switching Speed Improvement
    Seng, Ng Hong
    CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2010 (CSTIC 2010), 2010, 27 (01): : 21 - 26
  • [6] Gate Oxide Reliability Assessment of a SiC MOSFET for High Temperature Aeronautic Applications
    Santini, Thomas
    Sebastien, Morand
    Florent, Miller
    Luong-Viet Phung
    Allard, Bruno
    2013 IEEE ECCE ASIA DOWNUNDER (ECCE ASIA), 2013, : 385 - 391
  • [7] COMPARISON OF PERFORMANCE AND RELIABILITY BETWEEN MOSFETS WITH LPCVD GATE OXIDE AND THERMAL GATE OXIDE
    AHN, J
    TING, W
    KWONG, DL
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (12) : 2709 - 2710
  • [8] A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
    Kim, Sang Gi
    Kah, Dong Ha
    Na, Kyoung Il
    Yang, Yil Suk
    Koo, Jin Gun
    Kim, Jong Dae
    Lee, Jin Ho
    Park, Hoon Soo
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2012, 60 (10) : 1552 - 1556
  • [9] A novel trench gate MOSFET with a multiple-layered gate oxide for high-reliability operation
    Sang Gi Kim
    Dong Ha Kah
    Kyoung Il Na
    Yil Suk Yang
    Jin Gun Koo
    Jong Dae Kim
    Jin Ho Lee
    Hoon Soo Park
    Journal of the Korean Physical Society, 2012, 60 : 1552 - 1556
  • [10] Gate Oxide Induced Reliability Assessment of Junctionless FinFET-based Hydrogen Gas Sensor
    Gandhi, Navneet
    Jaisawal, Rajeewa Kumar
    Rathore, Sunil
    Kondekar, P. N.
    Dixit, Ankit
    Kumar, Navneen
    Georgiev, Vihar
    Bagga, Navjeet
    2023 IEEE SENSORS, 2023,
12345