Integratable and High Speed Complex-Coupled MQW-DFB Lasers Fabricated on Semi-Insulating Substrates

被引：0
|
作者：
Cheng Yuan-Bing [1 ]
Wang Yang [1 ]
Sun Yu [1 ]
Pan Jiao-Qing [1 ]
Bian Jing [1 ]
An Xin [1 ]
Zhao Ling-juan [1 ]
Wang Wei [1 ]
机构：
[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
CHINESE PHYSICS LETTERS | 2009年 / 26卷 / 05期
基金：
中国国家自然科学基金;
关键词：
QUANTUM-WELL; ELECTROABSORPTION MODULATOR; INP SUBSTRATE; OPERATION; LAYER;
D O I：
暂无
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
A novel integratable and high speed InGaAsP multi-quantum well (MQW) complex-coupled distributed feedback (DFB) laser is successfully fabricated on a semi-insulating substrate. The fabricated ridge DFB laser exhibits a threshold current of 26 mA, a slope efficiency of 0.14 W.A(-1) and a side mode suppression ratio of 40 dB together with a 3 dB bandwidth of more than 8 GHz. The device is suitable for 10 Gbit/s optical fiber communication.
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页数：4
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