Molecular dynamics simulation investigation on the plastic flow behaviour of silicon during nanometric cutting

被引:52
|
作者
Chavoshi, Saeed Zare [1 ]
Goel, Saurav [2 ]
Luo, Xichun [1 ]
机构
[1] Univ Strathclyde, Ctr Precis Mfg, Dept Design Manufacture & Engn Management, Glasgow G1 1XJ, Lanark, Scotland
[2] Queens Univ Belfast, Sch Mech & Aerosp Engn, Belfast BT9 5AH, Antrim, North Ireland
基金
英国工程与自然科学研究理事会;
关键词
molecular dynamics; material flow; stagnation region; nanometric cutting; single crystal silicon;
D O I
10.1088/0965-0393/24/1/015002
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Molecular dynamics (MD) simulation was carried out to acquire an in-depth understanding of the flow behaviour of single crystal silicon during nanometric cutting on three principal crystallographic planes and at different cutting temperatures. The key findings were that (i) the substrate material underneath the cutting tool was observed for the first time to experience a rotational flow akin to fluids at all the tested temperatures up to 1200 K. (ii) The degree of flow in terms of vorticity was found higher on the (1 1 1) crystal plane signifying better machinability on this orientation in accord with the current pool of knowledge (iii) an increase in the machining temperature reduces the spring-back effect and thereby the elastic recovery and (iv) the cutting orientation and the cutting temperature showed significant dependence on the location of the stagnation region in the cutting zone of the substrate.
引用
收藏
页数:10
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