Self-heating effects on Hot carrier degradation and its impact on Ring-Oscillator reliability

被引：0

作者：

Paliwoda, P. ^{[1
,2
]}

Chbili, Z. ^{[1
]}

Kerber, A. ^{[1
]}

Nigam, T. ^{[1
]}

Singh, D. ^{[1
]}

Nagahiro, K. ^{[1
]}

Manik, P. P. ^{[1
]}

Cimino, S. ^{[1
]}

Misra, D. ^{[2
]}

机构：

[1] GLOBALFOUNDRIES Inc, 400 Stone Break Rd Extens, Malta, NY 12020 USA

[2] New Jersey Inst Technol, ECE Dept, Newark, NJ 07102 USA

来源：

2018 INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2018年

关键词：

self-heating; ring oscillator; hot carrier injection; reliability; heat sensor;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper discusses the impact of self-heating (SH) on ring-oscillator (RO) reliability and its correlation to hot carrier (HC) degradation. We show that HC degradation modulation due to SH is only significant for logic PFETs at highly accelerated conditions. We show that these SH effects on HC are greatly reduced at moderate acceleration. By stressing the ROs at extreme conditions, we show that the SH impact on HC does not affect RO degradation.

引用

页码：1 / 4

页数：4

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