Shape of atomic steps on Si(111) under localized stress

被引：7

作者：

Omi, H ^{[1
]}

Bottomley, DJ

Homma, Y

Ogino, T

Stoyanov, S

Tonchev, V

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

[2] Bulgarian Acad Sci, Inst Phys Chem, BU-1113 Sofia, Bulgaria

来源：

PHYSICAL REVIEW B | 2002年 / 66卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.66.085303

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Localized elastic strain in Si crystal is artificially produced by buried silicon oxide inclusions formed beneath a lithographically defined area by oxygen implantation. The Si crystal with local strain is annealed at 1180-1260 degreesC, and the shape of atomic steps at a vicinal Si(111) surface is observed by in situ ultrahigh-vacuum secondary-electron microscopy and ex situ atomic force microscopy. The step shape is determined by the balance between the elastic stress at the surface and the Gibbs-Thomson effect-the decrease of the chemical potential mu related to the step curvature. The shape analysis enables us to estimate the strain-related contribution to the Gibbs free energy density DeltaG/A=8.3x10(-5) J/m(2).

引用

页码：853031 / 853035

页数：5

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