Quantum Transport in Si:P δ-Layer Wires

被引：0

作者：

Mendez, Juan P. ^{[1
]}

Mamaluy, Denis ^{[1
]}

Gao, Xujiao ^{[2
]}

Anderson, Evan M. ^{[3
]}

Campbell, DeAnna M. ^{[4
]}

Ivie, Jeffrey A. ^{[3
]}

Lu, Tzu-Ming ^{[5
]}

Schmucker, Scott W. ^{[3
]}

Misra, Shashank ^{[3
]}

机构：

[1] Sandia Natl Labs, Cognit & Emerging Comp, POB 5800, Albuquerque, NM 87185 USA

[2] Sandia Natl Labs, Elect Models & Simulat, POB 5800, Albuquerque, NM 87185 USA

[3] Sandia Natl Labs, Multiscale Fab Sci & Tech Dev, POB 5800, Albuquerque, NM 87185 USA

[4] Sandia Natl Labs, Biol & Chem Sensors, POB 5800, Albuquerque, NM 87185 USA

[5] Sandia Natl Labs, Quantum Phenomena, POB 5800, Albuquerque, NM 87185 USA

来源：

2020 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2020) | 2020年

关键词：

quantum transport; Si:P delta-layer systems; contact block reduction; NEGF; elastic scattering;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We employ a fully charge self-consistent quantum transport formalism, together with a heuristic elastic scattering model, to study the local density of state (LDOS) and the conductive properties of Si:P delta-layer wires at the cryogenic temperature of 4 K. The simulations allow us to explain the origin of shallow conducting sub-bands, recently observed in high resolution angle-resolved photoemission spectroscopy experiments. Our LDOS analysis shows the free electrons are spatially separated in layers with different average kinetic energies, which, along with elastic scattering, must be accounted for to reproduce the sheet resistance values obtained over a wide range of the d-layer donor densities.

引用

页码：181 / 184

页数：4

共 50 条

[1] Quantum Transport Simulations for Si:P δ-layer Tunnel Junctions
Mendez, Juan P.
Mamaluy, Denis
Gao, Xujiao
Misra, Shashank
2021 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES (SISPAD 2021), 2021, : 210 - 214
[2] Electronic transport in Si:P δ-doped wires
Smith, J. S.
Drumm, D. W.
Budi, A.
Vaitkus, J. A.
Cole, J. H.
Russo, S. P.
PHYSICAL REVIEW B, 2015, 92 (23)
[3] Transport in quantum wires
Siddhartha Lal
Sumathi Rao
Diptiman Sen
Pramana, 2002, 58 : 205 - 216
[4] Transport in quantum wires
Lal, S
Raw, S
Sen, D
PRAMANA-JOURNAL OF PHYSICS, 2002, 58 (02): : 205 - 216
[5] Spin-polarized quantum transport in Si dangling bond wires
An, Qi
Hu, Chen
Yu, Guanghua
Guo, Hong
NANOSCALE, 2020, 12 (10) : 6079 - 6088
[6] dc transport in quantum wires
Oreg, Y
Finkelstein, AM
PHYSICAL REVIEW B, 1996, 54 (20): : 14265 - 14268
[7] Transport properties of quantum wires
Sassetti, M
Cavaliere, F
Kramer, B
SOLID STATE COMMUNICATIONS, 2004, 131 (9-10) : 647 - 655
[8] Ge/Si Quantum Wires for Quantum Computing
Gao, Fei
Zhang, He-Yin
Wang, Jian-Huan
Ming, Ming
Wang, Ting
Zhang, Jian-Jun
Watzinger, Hannes
Kukucka, Josip
Vukusic, Lada
Katsaros, Georgios
Wang, Ke
Xu, Gang
Li, Hai-Ou
Guo, Guo-Ping
2021 5TH IEEE ELECTRON DEVICES TECHNOLOGY & MANUFACTURING CONFERENCE (EDTM), 2021,
[9] DC transport in quantum wires
Oreg, Y.
Finkel'stein, A. M.
Physical Review B: Condensed Matter, 54 (20/PT2):
[10] Electron transport in quantum wires
Sassetti, M
Braggio, A
Cavaliere, F
Kleimann, T
Kramer, B
QUANTUM PHENOMENA IN MESOSCOPIC SYSTEMS, 2003, 151 : 249 - 268

← 1 2 3 4 5 →