Investigation of Si delta-doped InGaAs/GaAs QW MSM photodetectors

被引：0
|
作者：
Florovic, M. [1 ]
Kovac, J. [1 ]
Srnanek, R. [1 ]
Jakabovic, J. [1 ]
Chovan, J. [2 ]
Sciana, B. [3 ]
Radziewicz, D. [3 ]
Tlaczala, M. [3 ]
机构：
[1] Slovak Univ Technol Bratislava, Dept Microelect, Fac Elect Engn & Informat Technol, Ilkovicova 3, Bratislava 81219, Slovakia
[2] Ctr Int Laser, Bratislava 81219, Slovakia
[3] Wroclaw Univ Technol, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
来源：
ASDAM '06: SIXTH INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS | 2006年
关键词：
D O I：
10.1109/ASDAM.2006.331171
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The aim of this work is to point on the electrical and optical properties of interdigital MSM photodetectors containing Si delta-doped In0.22Ga0.78As/GaAs QW in dependence of different QW depth under UD GaAs cap layer. For this purposes the delta-doped structure was bevelled The I-V characteristics in dark and under illumination as well as time response dependence on cap layer thickness were measured and evaluated.
引用
收藏
页码：129 / 132
页数：4
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