Field emission properties of nitrogen-doped diamond-like carbon films deposited by direct metal ion beam deposition

被引：0
|
作者：
Song, KM [1 ]
Paik, N [1 ]
Kim, S [1 ]
Kim, D [1 ]
Kim, S [1 ]
Kim, JY [1 ]
Jeon, H [1 ]
机构：
[1] Konkuk Univ, Dept Appl Phys, Chungli 380701, South Korea
来源：
SURFACE ENGINEERING 2001 - FUNDAMENTALS AND APPLICATIONS | 2001年 / 697卷
关键词：
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Nitrogen-doped diamond-like carbon (DLC) films were deposited on a silicon substrate by direct metal ion beam deposition (DMIBD). Partial pressures of nitrogen gas were changed to get different compositions of nitrogen in the DLC films. The composition and surface morphology of the films were examined using X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). Effect of nitrogen doping on field emission property was studied. The field emission data indicated that the nitrogen doping lowered the turn-on field and increase the current density. It was believed that doping of nitrogen into the DLC film plays an important role in enhancement of the field emission. This enhancement of field emission could be explained by the improvement of electron transport through nitrogen-dope DLC layer.
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页码：365 / 370
页数：6
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