Evidence for the improved defect-pool model for gap states in amorphous silicon from charge DLTS experiments on undoped a-Si:H

被引：36

作者：

Nadazdy, V ^{[1
]}

Durny, R ^{[1
]}

Pincik, E ^{[1
]}

机构：

[1] SLOVAK UNIV TECHNOL BRATISLAVA, FEI, DEPT PHYS, BRATISLAVA 81219, SLOVAKIA

来源：

PHYSICAL REVIEW LETTERS | 1997年 / 78卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.78.1102

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Results of the first charge deep level transient spectroscopy (DLTS) measurements on undoped a-Si:H are presented. The ability of the charge DLTS technique to resolve the gag-state distribution and to monitor directly its evolution after preequilibrium preparation by bias annealing is demonstrated. Three groups of gap states with mean energies of 0.63, 0.82, and 1.25 eV are observed. The condition for their creation as well as the energy values are in a good agreement with the D+, D-0, and D- states of the improved defect-pool model.

引用

页码：1102 / 1105

页数：4

共 15 条

[1] Defect-pool model for doped a-Si:H
TU Dresden, Dresden, Germany
J Non Cryst Solids, pt 1 (387-390):
[2] Defect-pool model for doped a-Si:H
Schmal, J
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1996, 200 : 387 - 390
[3] IMPROVED DEFECT-POOL MODEL FOR CHARGED DEFECTS IN AMORPHOUS-SILICON
POWELL, MJ
DEANE, SC
PHYSICAL REVIEW B, 1993, 48 (15): : 10815 - 10827
[4] Defect-pool model and the hydrogen density of states in hydrogenated amorphous silicon
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[5] EVIDENCE FOR THE DEFECT-POOL MODEL FROM INDUCED RECOMBINATION LEVEL SHIFTS IN UNDOPED A-SIH
BALBERG, I
LUBIANIKER, Y
PHYSICAL REVIEW B, 1993, 48 (12): : 8709 - 8714
[6] Impact of defect-pool model parameters on the lifetime in c-Si/a-Si: H heterojunction solar cells
Reaux, David
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Kleider, Jean-Paul
5TH INTERNATIONAL CONFERENCE ON SILICON PHOTOVOLTAICS, SILICONPV 2015, 2015, 77 : 153 - 158
[7] A DEFECT-POOL MODEL FOR NEAR-INTERFACE STATES IN AMORPHOUS-SILICON THIN-FILM TRANSISTORS
POWELL, MJ
DEANE, SC
FRENCH, ID
HUGHES, JR
MILNE, WI
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01): : 325 - 336
[8] DEFECT-POOL MODEL PARAMETERS FOR AMORPHOUS-SILICON DERIVED FROM FIELD-EFFECT MEASUREMENTS
DEANE, SC
POWELL, MJ
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1993, 164 : 323 - 326
[9] Defect pool density-of-states model in numerical modelling of a-Si:H structures
Topic, M
Smole, F
Furlan, J
INFORMACIJE MIDEM-JOURNAL OF MICROELECTRONICS ELECTRONIC COMPONENTS AND MATERIALS, 1996, 26 (03): : 156 - 160
[10] Band gap states in a-SiGe:H alloys determined from charge DLTS experiments
Zeman, M
Nádazdy, V
Pincik, E
van Swaaij, RACMM
ASDAM'98, SECOND INTERNATIONAL CONFERENCE ON ADVANCED SEMICONDUCTOR DEVICES AND MICROSYSTEMS, CONFERENCE PROCEEDINGS, 1998, : 19 - 22

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