Direct measurement of the Hall effect in a free-electron-like surface state

被引：12

作者：

Hirahara, Toru ^{[1
]}

Matsuda, Iwao ^{[1
]}

Liu, Canhua ^{[1
]}

Hobara, Rei ^{[1
]}

Yoshimoto, Shinya ^{[1
]}

Hasegawa, Shuji ^{[1
]}

机构：

[1] Univ Tokyo, Sch Sci, Dept Phys, Bunkyo Ku, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.73.235332

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have succeeded in directly measuring the Hall effect in a single-atomic layer on a Si (111) crystal surface. Our four-point-probe transport measurements under magnetic field showed that the behavior of majority carriers in the surface state changed from electronlike to holelike during the structural conversion from the root 3 x root 3-Ag to root 21 x root 21-(Ag, Au) surface superstructure. This is due to a change in the Fermi surface caused by band folding. The results are discussed quantitatively and shown to be consistent with the electronic structure obtained by photoemission spectroscopy.

引用

页数：7

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