Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full Heusler alloy

被引：71
|
作者：
Kubota, H [1 ]
Nakata, J [1 ]
Oogane, M [1 ]
Ando, Y [1 ]
Sakuma, A [1 ]
Miyazaki, T [1 ]
机构：
[1] Tohoku Univ, Dept Appl Phys, Grad Sch Engn, Aoba Ku, Sendai, Miyagi 9808579, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 7B期
关键词：
Heusler alloy; tunnel magnetoresistance; magnetic random access memory; spin polarization;
D O I：
10.1143/JJAP.43.L984
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co-Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250degreesC, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.
引用
收藏
页码：L984 / L986
页数：3
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