Memcapacitor response under step and sinusoidal voltage excitations

被引：13
|
作者：
Fouda, Mohamed E. [1 ]
Radwan, Ahmed G. [1 ,2 ]
机构：
[1] Cairo Univ, Dept Engn Math, Fac Engn, Cairo 12613, Egypt
[2] Nile Univ, Nanoelect Integrated Syst Ctr, Cairo, Egypt
来源：
MICROELECTRONICS JOURNAL | 2014年 / 45卷 / 11期
关键词：
Memcapacitor; Mem-element; Circuit theory; Step response; Sinusoidal response; Stored energy; Series and parallel connections; CIRCUIT ELEMENTS; MEMRISTOR; DESIGN; MEMINDUCTORS; EMULATOR; MEMORY;
D O I：
10.1016/j.mejo.2014.08.002
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recently, mom-elements have become fundamental in the circuit theory through promising potential applications based on the built-in memory-properties of these elements. In this paper, the mathematical analysis of the memcapacitor model is derived and the effect of different voltage excitation signals is studied for the linear dopant model. General closed form expressions and analyses are presented to describe the memcapacitor behavior under DC step and sinusoidal voltage excitations. Furthermore, the step and sinusoidal responses are used to analyze the memcapacitor response under any periodic signal using Fourier series expansion where the effect of the DC component on the output response is investigated. In addition, the stored energy in the memcapacitor under step, sinusoidal and square wave excitations is discussed. Moreover, the analysis of series and parallel connection of N non-matched memcapacitors in general is introduced and special cases of matched memcapacitors are discussed. The derived equations are verified using SPICE simulations showing great matching. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码：1372 / 1379
页数：8
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