Microwave bandpass filters based on thin-film acoustic resonators: theory and experiment

被引：8
|
作者：
Dvoesherstov, M. Yu. [1 ]
Cherednik, V. I. [1 ]
机构：
[1] Nizhnii Novgorod State Univ, Nizhnii Novgorod 603950, Russia
来源：
ACOUSTICAL PHYSICS | 2015年 / 61卷 / 06期
关键词：
acoustoelectronics; thin-film microwave resonators; filters; aluminum nitride; bulk acoustic waves; Q factor; effective electromechanical coupling coefficient; PIEZOELECTRIC MATERIALS;
D O I：
10.1134/S1063771015050073
中图分类号：
O42 [声学];
学科分类号：
070206 ; 082403 ;
摘要：
We theoretically and experimentally analyze microwave thin-film acoustoelectronic bandpass ladder filters built on AlN-based thin-film acoustoelectronic microwave resonators operating in the frequency range 4.6-5 GHz and describe the technology of their fabrication. We demonstrate that the parameters of filters are mainly determined by the characteristics of resonators that make up the filter and show that the characteristics of a three-section ladder filter can be significantly improved by optimizing the areas of the upper electrodes of the series and parallel resonators contained in it.
引用
收藏
页码：657 / 664
页数：8
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