Fabrication of silicon nanopillars using self-organized gold-chromium mask

被引:27
|
作者
Ovchinnikov, V [1 ]
Malinin, A [1 ]
Novikov, S [1 ]
Tuovinen, C [1 ]
机构
[1] Aalto Univ, Dept Elect & Commun Engn, Elect Phys Lab, FIN-02015 Helsinki, Finland
关键词
nanostructures; self-organized mask; nanopillars; plasma etch; silicon;
D O I
10.1016/S0921-5107(99)00244-5
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper we present a fabrication process for nanometer scale silicon pillars. High aspect ratio and smooth sidewalls of the pillars are obtained by reactive ion etching of self-organized gold-chromium masked silicon. After annealing, a thin Au/Cr film is converted to the disordered array of metal particles. The particle diameter and density could be controlled by varying the thickness of the films. A set of experiments in fluorine based plasmas has been carried out in order to investigate the processing of silicon quantum pillars. The results show that the mask has a low speed of erosion. Sidewall evolution during low rf power etching has been analyzed. The process parameters for realizing high-anisotropy pillars of different shapes have been found. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:459 / 463
页数:5
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